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2.5MHz/1.5MHz Step-Down Converters
with 60m ? Bypass in TDFN for CDMA PA Power
ELECTRICAL CHARACTERISTICS (continued)
(V IN = V SHDN = 3.6V, V REFIN = 0.9, V HP = V IC = 0V, T A = -40°C to +85°C, typical values are at T A = +25°C, unless otherwise noted.)
(Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
LX
On-Resistance
R ONP
R ONN
p-channel MOSFET switch, I LX = -40mA
n-channel MOSFET rectifier, I LX = 40mA
0.2
0.18
0.4
0.35
?
LX Leakage Current
I LXLKG
V IN = 5.5V,
LX = GND
T A = +25 ° C
T A = +85 ° C
0.1
1
5
μA
p-Channel MOSFET Peak
Current Limit
n-Channel MOSFET Valley
Current Limit
Minimum On- and Off-Times
t ON /t OFF Ratio
Switching Frequency
I LIMP
I LIMN
t ON(MIN)
t OFF(MIN)
t ON(MIN) / t OFF(MIN)
MAX8581
MAX8582
700
790
70
70
0.90
1077
985
114
112
1.02
2.5
1.5
1400
1150
150
150
1.13
mA
mA
ns
s/s
MHz
BYPASS
On-Resistance
R ONBYP
p-channel MOSFET bypass,
I OUT = -400mA, T A = +25 ° C
0.06
0.1
?
p-channel MOSFET bypass, I OUT = -400mA
0.12
Bypass Current Limit
1.0
2.1
A
Step-Down Current Limit in
Bypass
700
1077
1400
mA
GENERAL
Thermal Shutdown
Thermal-Shutdown Hysteresis
+160
20
° C
° C
Power-Up Delay
V SHDN rising to V LX rising
50
130
μs
Note 1: All devices are 100% production tested at T A = +25°C. Limits over the operating temperature range are guaranteed by design.
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